Back to Search
Start Over
First-principles investigation of the alloy scattering potential in dilute Si(1-x)C(x)
- Publication Year :
- 2012
- Publisher :
- American Physical Society, 2012.
-
Abstract
- A first-principles method is applied to find the intra and intervalley n-type carrier scattering rates for substitutional carbon in silicon. The method builds on a previously developed first-principles approach with the introduction of an interpolation technique to determine the intravalley scattering rates. Intravalley scattering is found to be the dominant alloy scattering process in Si1-xCx, followed by g-type intervalley scattering. Mobility calculations show that alloy scattering due to substitutional C alone cannot account for the experimentally observed degradation of the mobility. We show that the incorporation of additional charged impurity scattering due to electrically active interstitial C complexes models this residual resistivity well.
- Subjects :
- Silicon
Materials science
Condensed matter physics
Band gap
SI1-YCY
Resistivity
chemistry.chemical_element
Transport
Band-gaps
Condensed Matter Physics
Pressure coefficients
Substitutional-carbon pair
Electronic, Optical and Magnetic Materials
Alloy scattering
chemistry
Electrical resistivity and conductivity
Interstitial carbon
Quasi-Newton methods
Defects
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....512619cdbd134d46474925e3ee767a39