Back to Search
Start Over
Nanometer-scale dielectric constant of Ge quantum dots using apertureless near-field scanning optical microscopy
- Source :
- Applied Physics Letters. 96(No. 6):063107
- Publication Year :
- 2010
-
Abstract
- Tip-enhanced near-field scattering images of Ge quantum dots (QDs) with 20–40 nm height and 220–270 nm diameter grown on a Si substrate have been observed with a spatial resolution of 15 nm. Changing the wavelength of the incident light, the contrast of the images is reversed. It is found that the scattering intensity is caused by the dielectric constants of the materials under the probe. By changing the wavelength of the incident light, we have obtained information about the dielectric constant dispersion of single Ge QDs.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
business.industry
Scattering
Physics::Optics
Dielectric
Ray
law.invention
Condensed Matter::Materials Science
Wavelength
Optics
Optical microscope
Quantum dot laser
Quantum dot
law
Optoelectronics
Near-field scanning optical microscope
business
Subjects
Details
- Language :
- English
- Volume :
- 96
- Issue :
- No. 6
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi.dedup.....509fe3064436bc0e1bf89dc37b382626