Back to Search
Start Over
Passive High Power RF Comb Filters Using Epitaxial GaN/NbN/SiC HBARs
- Source :
- IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 68:3406-3414
- Publication Year :
- 2021
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2021.
-
Abstract
- This report presents the first demonstration of passive RF comb filters made using epitaxial GaN/NbN/SiC high overtone bulk acoustic resonators (epi-HBARs). The two-port device is fabricated on electronic-grade GaN, electrically transduced, and acoustically coupled. The multi-mode epi-HBAR comb filter demonstrated here has 158 sharp filter passbands periodically distributed between 1 and 4 GHz (L–S-bands) with a free spectral range (FSR) of 17 MHz. The individual passbands of the epi-HBAR comb filter demonstrate transmission bandwidths (BWs) up to 800 kHz, ${f} {\times } {Q}$ values of up to $7\times 10^{{14}}$ Hz, and an average ${k}_{ {\text {eff}}}^{ {{2}}} {\times } {Q}$ figure of merit of 41.2 at room temperature. The GaN/NbN/SiC epi-HBAR comb filter is capable of operating at high RF power levels, with linear and distortion-free performance seen up to at least 1 W of continuous wave (CW) power and up to at least 10 W of pulsed power. The compact epi-HBAR comb filters can be co-fabricated with GaN-based electronics and could potentially replace larger, off-chip or discrete-component comb filters. They can be used for spectrum sensing and as signal processing elements for remote sensing and pulsed radar.
Details
- ISSN :
- 15258955 and 08853010
- Volume :
- 68
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
- Accession number :
- edsair.doi.dedup.....5060be6e28d658deba5e74022d772b5b