Ferroelectric nanodomains in epitaxial GeTe thin films

International audience; In the quest for materials for ferroelectrics-based spintronics with a large spin-orbit coupling, it is essential to carefully control the ferroelectric domains structure, their spatial organization and the domain wall type. Here, we perform the growth of GeTe thin lms on Si by molecular beam epitaxy in a large thickness range. We show that the volume fraction along with the size of the ferroelectric nanodomains can be controlled by nely adjusting the deposition thickness and temperature. We evidence the formation of 71 •-type domain walls and in situ measurements during thermal cycling show the hysteretic appearance and decay of ferroelectric domains. In combination with a detailed analysis of the GeTe/Si interface, we demonstrate that the interfacial mist dislocations formed during the growth plays a key role in the stability of the ferroelectric nanodomains.