Back to Search
Start Over
Nondestructive, Self-Contained Extraction Method of Parasitic Resistances in HEMT Devices
- Source :
- IEEE Transactions on Microwave Theory and Techniques. 68:2571-2578
- Publication Year :
- 2020
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2020.
-
Abstract
- This article addresses the classical problem of determining the extrinsic resistances ( $R_{G}$ , $R_{S}$ , and $R_{D}$ ) of field-effect transistors (FETs) and, in particular, of high-electron-mobility transistors (HEMTs). The presented approach relies on small-signal measurements of open-channel transistors, as often proposed both for traditional metal–semiconductor FETs (MESFETs) and HEMTs. Unlike what is common practice with HEMTs, the method proposed here does not oversimplify the model of the active channel. On the contrary, we retrieve from the literature a possible analytical model for the open-channel HEMT and use it to determine the triplet of extrinsic resistances without the need of stressing the gate junction with too high currents. Another result of the approach, valid both for MESFETs and HEMTs, is a deterministic way to remove the contribution of the gate junction from the small-signal parameters of the measured devices. All extractions process data that are available on suitable ranges in frequency or in bias voltage, without taking to the limit the sweep parameters or seeking specific resonances. Also, optimizations are only allowed to refine the nominal values, not as the main technique of extraction. These goals are achieved by setting up different subproblems in the form of overdetermined linear systems and then solving by pseudoinversion. The validity of the approach is demonstrated on the measurements of devices from advanced HEMT technologies realized by OMMIC, both GaAs-based (40-nm gate length) and GaN-based (100 and 60 nm).
- Subjects :
- Physics
high-electron-mobility transistor (HEMT)
Radiation
business.industry
Transistor
Linear system
Settore ING-INF/01
Extrinsic circuit
020206 networking & telecommunications
Biasing
02 engineering and technology
High-electron-mobility transistor
small-signal equivalent circuit (SSEC)
Condensed Matter Physics
parasitic resistances
law.invention
Overdetermined system
law
Logic gate
Limit (music)
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
Electrical and Electronic Engineering
business
Communication channel
Subjects
Details
- ISSN :
- 15579670 and 00189480
- Volume :
- 68
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Microwave Theory and Techniques
- Accession number :
- edsair.doi.dedup.....4fea38373656a389fede8934c06129f2