A Sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor Based on ZnO/AgNW Schottky Contact

Made available in DSpace on 2022-04-29T08:46:02Z (GMT). No. of bitstreams: 0 Previous issue date: 2021-01-01 Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an ION/IOFF ratio of 104, an on-current density of 65.3 mA/cm2 and a normalized transconductance of 113.4 S/cm2. Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern. São Paulo State University – UNESP, Faculty of Science and Technology (FCT), Physics Department, Presidente Prudente, SP, Brazil. (e-mail: leonardo.nogueira@unesp.br) São Paulo State University – UNESP, Faculty of Science and Technology (FCT), Physics Department, Presidente Prudente, SP, Brazil. Universidade Federal do Paraná – UFPR, Physics Department, Curitiba, PR, Brazil. Universidade Tecnológica Federal Do Paraná – UTFPR, Physics Department, Curitiba, PR, Brazil.