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Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum
- Source :
- Nature Communications
- Publication Year :
- 2014
-
Abstract
- Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min−1) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials.<br />Innovative substrate engineering is necessary to improve the quality of CVD-synthesized graphene. Here the authors demonstrate in situ fabrication of an eutectic Pt-Si alloy that forms a wetting liquid surface on polycrystalline Pt foils, allowing millimetre-sized graphene crystals to grow in minutes.
- Subjects :
- Materials science
General Physics and Astronomy
chemistry.chemical_element
Nanotechnology
02 engineering and technology
Chemical vapor deposition
010402 general chemistry
01 natural sciences
General Biochemistry, Genetics and Molecular Biology
Article
law.invention
Platinum silicide
chemistry.chemical_compound
law
Graphene oxide paper
Multidisciplinary
Graphene
Graphene foam
General Chemistry
021001 nanoscience & nanotechnology
0104 chemical sciences
chemistry
0210 nano-technology
Platinum
Layer (electronics)
Graphene nanoribbons
Subjects
Details
- ISSN :
- 20411723
- Volume :
- 6
- Database :
- OpenAIRE
- Journal :
- Nature communications
- Accession number :
- edsair.doi.dedup.....4f547535421a873c0661dfd5bcfb77e7