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A Technology Overview of the PowerChip Development Program

Authors :
Vicky V. T. Doan-Nguyen
Donghyun Jin
Bin Lu
Daniel Piedra
Xuehong Yu
Jeffrey H. Lang
Jungkwun Kim
Charles R. Sullivan
Gary DesGroseilliers
Mohammad Araghchini
Minsoo Kim
Min Sun
David M. Otten
Christopher G. Levey
Jesus A. del Alamo
Jizheng Qiu
John David Ranson
Jun Chen
Daniel V. Harburg
Mark G. Allen
Florian Herrault
Christopher B. Murray
David J. Perreault
Tomas Palacios
Hongseok Yun
Seungbum Lim
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Massachusetts Institute of Technology. Research Laboratory of Electronics
Perreault, David J.
Araghchini, Mohammad
Jin, Donghyun
Lim, Seungbum
Lu, Bin
Piedra, Daniel
Sun, Min
del Alamo, Jesus A.
DesGroseilliers, Gary
Lang, Jeffrey H.
Otten, David M.
Palacios, Tomas
Source :
Vabulas
Publication Year :
2012
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2012.

Abstract

The PowerChip research program is developing technologies to radically improve the size, integration, and performance of power electronics operating at up to grid-scale voltages (e.g., up to 200V) and low-to-moderate power levels (e.g., up to 50W) and demonstrating the technologies in a high-efficiency light-emitting diode driver, as an example application. This paper presents an overview of the program and of the progress toward meeting the program goals. Key program aspects and progress in advanced nitride power devices and device reliability, integrated high-frequency magnetics and magnetic materials, and high-frequency converter architectures are summarized.

Details

Language :
English
Database :
OpenAIRE
Journal :
Vabulas
Accession number :
edsair.doi.dedup.....4e4ca061d8eb2d4e0372cacea9c20a0b