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Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN
- Publication Year :
- 2020
-
Abstract
- We have applied positron annihilation spectroscopy to study the formation of Ga vacancy related defects in Mg and Mn doped bulk GaN crystals grown by the ammonothermal method. We show that Mn doping has little or no effect on the formation of Ga vacancies, while Mg doping strongly suppresses their formation, in spite of both dopants leading to highly resistive material. We suggest the differences are primarily due to the hydrogen-dopant interactions. Further investigations are called for to draw a detailed picture of the atomic scale phe-nomena in the synthesis of ammonothermal GaN.
- Subjects :
- Materials science
B2. Semiconducting III-V materials
Hydrothermal growth
02 engineering and technology
Nitride
01 natural sciences
Atomic units
114 Physical sciences
Positron annihilation spectroscopy
Nitrides
Inorganic Chemistry
Vacancy defect
B1. Nitrides
0103 physical sciences
HIGH-PRESSURE
Materials Chemistry
Doping
Point defects
NA-FLUX METHOD
010302 applied physics
Resistive touchscreen
Dopant
Condensed matter physics
021001 nanoscience & nanotechnology
Condensed Matter Physics
Crystallographic defect
A1. Point defects
A2. Hydrothermal growth
GROWTH
A1. Doping
0210 nano-technology
Semiconducting III-V materials
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....4ce9163bc91bcce4725f437f4332ea6d