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Passivation layers for indoor solar cells at low irradiation intensities
- Publication Year :
- 2012
-
Abstract
- The passivation mechanisms and qualities of Al2O3, SiNx, SiO2 and a-Si:H( i ) on p - and n -type silicon are investigated by quasi-steady-state photoluminescence measurements. This technique allows effective lifetime measurements in an extremely large injection range between 1010 cm-3 and 1017 cm-3. The measurements are discussed focusing on injections below 1012 cm-3 in order to determine the most effective passivation layer for solar cells arranged for indoor applications. Fixed negative charges in the passivation layer cause field-effect passivation due to band bending leading to either accumulation or inversion at the passivation layer/silicon interface. Accumulation causes a stable passivation quality at low level injection. Inversion leads to effective lifetime losses similar to the losses in the space charge region. On p -type silicon the most effective surface passivation at low injections is provided by Al2O3 or a-Si:H( i ). The n -type silicon samples passivated with a-Si:H( i ) show the best effective lifetimes. SiNx and SiO2 show lifetimes one order of magnitude below a-Si:H( i ). Al2O3 on n -type is the most effective passivation at high injections around 1015 cm-3. Due to inversion losses at low level injections the passivation quality decreases more than two orders of magnitude for injections around 1010 cm-3.
- Subjects :
- Materials science
Photoluminescence
Silicon
Passivation
chemistry.chemical_element
Lichteinfang
law.invention
Energy(all)
Depletion region
law
Solar cell
Passivierung
Indoor
Charakterisierung
Oberflächen - Konditionierung
Solarzellen - Entwicklung und Charakterisierung
business.industry
Low level injection
Silicium-Photovoltaik
Band bending
chemistry
Qualitätssicherung und Messtechnikentwicklung - Material
Passivation layer
Optoelectronics
business
Zellen und Module
Order of magnitude
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....4c9ab224b8b081f14add3c0ad810ce91