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AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
- Source :
- Micromachines, Volume 9, Issue 11, Micromachines, Vol 9, Iss 11, p 546 (2018)
- Publication Year :
- 2018
- Publisher :
- MDPI AG, 2018.
-
Abstract
- AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3&ndash<br />0.6 &Omega<br />&middot<br />mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.
- Subjects :
- Materials science
lcsh:Mechanical engineering and machinery
power amplifier
Algan gan
02 engineering and technology
High-electron-mobility transistor
01 natural sciences
Article
law.invention
AlGaN/GaN
law
0103 physical sciences
lcsh:TJ1-1570
Electrical and Electronic Engineering
High electron
Ohmic contact
010302 applied physics
business.industry
Mechanical Engineering
Amplifier
Transistor
ohmic contact
021001 nanoscience & nanotechnology
high electron mobility transistors
ammonothermal GaN
Control and Systems Engineering
regrown contact
high electron mobility transistor (HEMT)
Optoelectronics
0210 nano-technology
business
Microwave
Semi insulating
Subjects
Details
- ISSN :
- 2072666X
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- Micromachines
- Accession number :
- edsair.doi.dedup.....4b487351f097ab1824ef158c8ff25984