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Electronic and Optical Properties of Dislocations in Silicon
- Source :
- Crystals, Vol 6, Iss 7, p 74 (2016), Crystals; Volume 6; Issue 7; Pages: 74
- Publication Year :
- 2016
- Publisher :
- MDPI AG, 2016.
-
Abstract
- Dislocations exhibit a number of exceptional electronic properties resulting in a significant increase of the drain current of metal-oxide-semiconductor field-effect transistors (MOSFETs) if defined numbers of these defects are placed in the channel. Measurements on individual dislocations in Si refer to a supermetallic conductivity. A model of the electronic structure of dislocations is proposed based on experimental measurements and tight binding simulations. It is shown that the high strain level on the dislocation core—exceeding 10% or more—causes locally dramatic changes of the band structure and results in the formation of a quantum well along the dislocation line. This explains experimental findings (two-dimensional electron gas and single-electron transitions). The energy quantization within the quantum well is most important for supermetallic conductivity.
- Subjects :
- Materials science
General Chemical Engineering
02 engineering and technology
Electronic structure
Conductivity
01 natural sciences
Inorganic Chemistry
Condensed Matter::Materials Science
Tight binding
strain
0103 physical sciences
lcsh:QD901-999
General Materials Science
Electronic band structure
Quantum well
010302 applied physics
Dislocation creep
dislocation
Condensed matter physics
silicon
021001 nanoscience & nanotechnology
Condensed Matter Physics
Crystallography
carrier confinement
electronic properties
lcsh:Crystallography
Dislocation
0210 nano-technology
Fermi gas
Subjects
Details
- Language :
- English
- ISSN :
- 20734352
- Volume :
- 6
- Issue :
- 7
- Database :
- OpenAIRE
- Journal :
- Crystals
- Accession number :
- edsair.doi.dedup.....4a7f28e070154846522189179066bb5f