Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide

Three samples of 4H polytype of silicon carbide (4H-SiC) covered with the following sequence of layers: carbon/nickel/silicon/nickel/silicon were investigated with micro-Raman spectroscopy. Different thermal treatments of each sample result in differences of carbon layer structure and migration of carbon atoms thorough silicide layer. Two ranges of Raman shift were investigated. The first one is placed between 1000 cm−1 and 2000 cm−1. The main carbon bands D and G are observed in this range. Analysis of the positions of these bands and their intensity ratio enables one to determine the graphitization degree of carbon layer. Additional information about the changes of the carbon layer structure was derived from analysis of 2D band placed around 2700 cm−1. Application of deep ultraviolet excitation delivered information about the structure of carbon layer formed on the free surface of silicides and the distribution of the carbon inside the silicide layer.