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Influence of substitutional metallic impurities on the performances of p-type crystalline silicon solar cells: The case of gold
- Source :
- Journal of Applied Physics, Journal of Applied Physics, American Institute of Physics, 2006, 100 (12), pp.123502. ⟨10.1063/1.2400801⟩, Journal of Applied Physics, 2006, 100 (12), pp.123502. ⟨10.1063/1.2400801⟩
- Publication Year :
- 2006
- Publisher :
- HAL CCSD, 2006.
-
Abstract
- The influence of a gold bulk contamination on the performances of boron doped p-type crystalline silicon solar cells is investigated for different base doping levels and different kinds of materials, such as float zone Si, Czochralski Si, and multicrystalline Si. Solar cells are made from intentionally contaminated silicon wafers. By monitoring the evolution of the electrically active substitutional gold concentration by means of bulk lifetime and minority carrier diffusion length measurements, this paper highlights the eventual gettering or hydrogenation effects occurring throughout the whole process but also of the danger of such an impurity in materials containing large densities of extended defects generating recombination centers by means of the impurity-defect interaction.
- Subjects :
- inorganic chemicals
010302 applied physics
[PHYS]Physics [physics]
Materials science
Silicon
business.industry
Nanocrystalline silicon
General Physics and Astronomy
chemistry.chemical_element
02 engineering and technology
Carrier lifetime
Quantum dot solar cell
021001 nanoscience & nanotechnology
01 natural sciences
7. Clean energy
Polymer solar cell
Monocrystalline silicon
chemistry
0103 physical sciences
Optoelectronics
Wafer
Crystalline silicon
0210 nano-technology
business
ComputingMilieux_MISCELLANEOUS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979 and 10897550
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics, Journal of Applied Physics, American Institute of Physics, 2006, 100 (12), pp.123502. ⟨10.1063/1.2400801⟩, Journal of Applied Physics, 2006, 100 (12), pp.123502. ⟨10.1063/1.2400801⟩
- Accession number :
- edsair.doi.dedup.....499f27be2c3808c67c6039f816aa3bd7