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Optical Properties of Stranski-Krastanov Grown Three-Dimensional Si/Si(1-X)G(X) Nanostructures
- Publication Year :
- 2005
-
Abstract
- Detailed Raman and photoluminescence (PL) measurements are reported for Si/Si 1− x Ge x nanostructures grown by molecular beam epitaxy under near Stranski–Krastanov (S–K) growth mode conditions. In samples with x ranging from 0.096 to 0.53, we observe that an increase in the Raman signal related to Ge–Ge vibrations correlates with (i) a red shift in the PL peak position, (ii) an increase in the activation energy of PL thermal quenching, and (iii) an increase in the PL quantum efficiency. The results indicate that for x >0.5 Ge atoms form nanometer size clusters with a nearly pure Ge core surrounded by a SiGe shell. Time-resolved PL measurements reveal a stretched-exponential long-lived PL component that is associated with compositional and dimensional fluctuations in the SiGe dots.
- Subjects :
- Photoluminescence
Materials science
Silicon
business.industry
Analytical chemistry
chemistry.chemical_element
Activation energy
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
symbols.namesake
Optics
chemistry
Nanocrystal
symbols
Quantum efficiency
business
Raman spectroscopy
Raman scattering
Molecular beam epitaxy
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....47a983d5ad038f321998ba0458a69c6e