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Strain induced topological phase transitions in monolayer honeycomb structures of group-V binary compounds
- Source :
- Scientific Reports
- Publication Year :
- 2015
- Publisher :
- Nature Publishing Group, 2015.
-
Abstract
- We present first-principles calculations of electronic structures of a class of two-dimensional (2D) honeycomb structures of group-V binary compounds. Our results show these new 2D materials are stable semiconductors with direct or indirect band gaps. The band gap can be tuned by applying lattice strain. During their stretchable regime, they all exhibit metal-indirect gap semiconductor-direct gap semiconductor-topological insulator (TI) transitions with increasing strain from negative (compressive) to positive (tensile) values. The topological phase transition results from the band inversion at $\Gamma$ point due to lattice strain and is irrelevant to spin-orbit coupling (SOC).<br />Comment: 16 pages, 6 figures
- Subjects :
- Condensed Matter - Materials Science
Phase transition
Multidisciplinary
Materials science
Condensed matter physics
business.industry
Band gap
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
Insulator (electricity)
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Article
Condensed Matter::Materials Science
Honeycomb structure
Semiconductor
0103 physical sciences
Ultimate tensile strength
Monolayer
Topological order
010306 general physics
0210 nano-technology
business
Subjects
Details
- Language :
- English
- ISSN :
- 20452322
- Database :
- OpenAIRE
- Journal :
- Scientific Reports
- Accession number :
- edsair.doi.dedup.....462f46350445814439868ba61b147c58
- Full Text :
- https://doi.org/10.1038/srep17980