Cite
Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs
MLA
Charalabos A. Dimitriadis, et al. Impact of Front-Back Gate Coupling on Low Frequency Noise in 28 Nm FDSOI MOSFETs. Sept. 2012. EBSCOhost, https://doi.org/10.1109/ESSDERC.2012.6343401⟩.
APA
Charalabos A. Dimitriadis, Christoforos G. Theodorou, Sebastien Haendler, Nicolas Planes, Gerard Ghibaudo, E. G. Ioannidis, Franck Arnaud, & J. Jomaah. (2012). Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs. https://doi.org/10.1109/ESSDERC.2012.6343401⟩
Chicago
Charalabos A. Dimitriadis, Christoforos G. Theodorou, Sebastien Haendler, Nicolas Planes, Gerard Ghibaudo, E. G. Ioannidis, Franck Arnaud, and J. Jomaah. 2012. “Impact of Front-Back Gate Coupling on Low Frequency Noise in 28 Nm FDSOI MOSFETs,” September. doi:10.1109/ESSDERC.2012.6343401⟩.