Back to Search Start Over

InSb nanowires with built-in GaxIn1-xSb tunnel barriers for Majorana devices

Authors :
Takashi Taniguchi
Sebastien Plissard
Roy L. M. Op het Veld
Michiel W. A. de Moor
Michael Wimmer
Kenji Watanabe
Önder Gül
Sebastian Kölling
Sonia Conesa-Boj
Diana Car
Vigdis Toresen
Hao Zhang
Erik P. A. M. Bakkers
Elham M. T. Fadaly
Leo P. Kouwenhoven
Photonics and Semiconductor Nanophysics
Advanced Nanomaterials & Devices
Semiconductor Nanostructures and Impurities
Eindhoven University of Technology [Eindhoven] (TU/e)
Delft University of Technology (TU Delft)
Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN)
Laboratoire d'analyse et d'architecture des systèmes (LAAS)
Université Toulouse Capitole (UT Capitole)
Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse)
Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J)
Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3)
Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP)
Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole)
Université de Toulouse (UT)
National Institute for Materials Science (NIMS)
Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1)
Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3)
Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse)
Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP)
Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1)
Université Fédérale Toulouse Midi-Pyrénées
National Institute for Materials Science
Source :
Nano Letters, 17(2). American Chemical Society, Nano Letters, Nano Letters, 2017, 17 (2), pp.721-727. ⟨10.1021/acs.nanolett.6b03835⟩, Nano Letters, American Chemical Society, 2017, 17 (2), pp.721-727. ⟨10.1021/acs.nanolett.6b03835⟩
Publication Year :
2017
Publisher :
American Chemical Society, 2017.

Abstract

Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the GaxIn1-xSb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB)-fits to the experimental I-V traces.<br />Comment: See doi: 10.5281/zenodo.5064400 for source data. No changes in this version compared to the previous version

Details

Language :
English
ISSN :
15306992 and 15306984
Volume :
17
Issue :
2
Database :
OpenAIRE
Journal :
Nano Letters
Accession number :
edsair.doi.dedup.....44639f61b0bfff78736a70d243ad07bb
Full Text :
https://doi.org/10.1021/acs.nanolett.6b03835