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Optical properties of type-II AlInAs/AlGaAs quantum dots by photoluminescence studies
- Source :
- Journal of Applied Physics, Journal of Applied Physics, 2016, 120 (3), pp.035701. ⟨10.1063/1.4958867⟩, Journal of Applied Physics, American Institute of Physics, 2016, 120 (3), pp.035701. ⟨10.1063/1.4958867⟩
- Publication Year :
- 2016
- Publisher :
- HAL CCSD, 2016.
-
Abstract
- We report photoluminescence (PL) characterization and model simulation of AlInAs/AlGaAs type-II quantum dots (QDs). A thorough and precise determination of the band parameters for QD and matrix materials is given, focusing on the effects of alloy composition and strain state on the electronic properties. Origins of experimentally observed PL emission peaks are identified through a comparison with the band lineup theoretically determined in this work. We interpret the QD emission as originating from indirect type-II transitions involving electrons in the barrier X valley and heavy holes with S and P symmetry.
- Subjects :
- 010302 applied physics
[PHYS]Physics [physics]
Photoluminescence
Materials science
Condensed matter physics
General Physics and Astronomy
02 engineering and technology
Electron
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
01 natural sciences
Symmetry (physics)
Characterization (materials science)
Gallium arsenide
Matrix (mathematics)
chemistry.chemical_compound
chemistry
Quantum dot
0103 physical sciences
0210 nano-technology
Electronic band structure
ComputingMilieux_MISCELLANEOUS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979 and 10897550
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics, Journal of Applied Physics, 2016, 120 (3), pp.035701. ⟨10.1063/1.4958867⟩, Journal of Applied Physics, American Institute of Physics, 2016, 120 (3), pp.035701. ⟨10.1063/1.4958867⟩
- Accession number :
- edsair.doi.dedup.....443a7988e5917cf9c46069155f99c0f7
- Full Text :
- https://doi.org/10.1063/1.4958867⟩