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High-Speed Germanium Pin Photodiodes Integrated on Silicon-on-Insulator Nanophotonic Waveguides
- Source :
- 2019 IEEE 16th International Conference on Group IV Photonics (GFP), 16th IEEE International Conference on Group IV Photonics, 16th IEEE International Conference on Group IV Photonics, Aug 2019, Singapore, Singapore. ⟨10.1109/GROUP4.2019.8926080⟩
- Publication Year :
- 2019
-
Abstract
- International audience; Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of-13.9,-12.7, and-11.3 dBm.
- Subjects :
- Materials science
Silicon
business.industry
Nanophotonics
chemistry.chemical_element
Silicon on insulator
Photodetector
Germanium
Optical power
7. Clean energy
Photodiode
law.invention
Responsivity
optical photodetectors
germanium
silicon nanophotonics
chemistry
law
silicon-on- insulator
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Optoelectronics
complementary metal-oxide- semiconductor technology
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
business
Subjects
Details
- ISBN :
- 978-1-72810-905-3
- ISBNs :
- 9781728109053
- Database :
- OpenAIRE
- Journal :
- 2019 IEEE 16th International Conference on Group IV Photonics (GFP)
- Accession number :
- edsair.doi.dedup.....43e1ad3e9fcb039692e5d0ea01280868
- Full Text :
- https://doi.org/10.1109/GROUP4.2019.8926080