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High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films
- Source :
- ACS applied materialsinterfaces. 12(10)
- Publication Year :
- 2020
-
Abstract
- Photodetectors based on p-type metal oxides are still a challenge for optoelectronic device applications. Many effects have been paid to improve their performance and expand their detection range. Here, high-quality Cu1-xNixO (x = 0, 0.2, and 0.4) film photodetectors were prepared by a solution process. The crystal quality, morphology, and grain size of Cu1-xNixO films can be modulated by Ni doping. Among the photodetectors, the Cu0.8Ni0.2O photodetector shows the maximum photocurrent value (6 × 10-7 A) under a 635 nm laser illumination. High responsivity (26.46 A/W) and external quantum efficiency (5176%) are also achieved for the Cu0.8Ni0.2O photodetector. This is because the Cu0.8Ni0.2O photosensitive layer exhibits high photoconductivity, low surface states, and high crystallization after 20% Ni doping. Compared to the other photodetectors, the Cu0.8Ni0.2O photodetector exhibits the optimal response in the near-infrared region, owing to the high absorption coefficient. These findings provide a route to fabricate high-performance and wide-detection range p-type metal oxide photodetectors.
- Subjects :
- Photocurrent
Materials science
business.industry
Photoconductivity
Doping
Photodetector
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Responsivity
Optoelectronics
General Materials Science
Quantum efficiency
0210 nano-technology
business
Solution process
Surface states
Subjects
Details
- ISSN :
- 19448252
- Volume :
- 12
- Issue :
- 10
- Database :
- OpenAIRE
- Journal :
- ACS applied materialsinterfaces
- Accession number :
- edsair.doi.dedup.....42e638cf3d6c5ad5487f46d6c47a3084