n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion

MLA

Attila Németh, et al. N-Type Doping of Epsilon-Ga2O3 Epilayers by High-Temperature Tin Diffusion. Jan. 2021. EBSCOhost, https://doi.org/10.1016/j.actamat.2021.116848.

APA

Attila Németh, Roberto Fornari, Matteo Bosi, Alessio Lamperti, Alessio Bosio, Ildikó Cora, Antonella Parisini, Carmine Borelli, Zsolt Fogarassy, Z. Zolnai, Salvatore Vantaggio, Béla Pécz, & Laura Fornasini. (2021). n-Type doping of epsilon-Ga2O3 epilayers by high-temperature tin diffusion. https://doi.org/10.1016/j.actamat.2021.116848

Chicago

Attila Németh, Roberto Fornari, Matteo Bosi, Alessio Lamperti, Alessio Bosio, Ildikó Cora, Antonella Parisini, et al. 2021. “N-Type Doping of Epsilon-Ga2O3 Epilayers by High-Temperature Tin Diffusion,” January. doi:10.1016/j.actamat.2021.116848.