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The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates
- Source :
- physica status solidi (a). 217:1900762
- Publication Year :
- 2019
- Publisher :
- Wiley, 2019.
- Subjects :
- Materials science
business.industry
Transistor
Collapse (topology)
Algan gan
Surfaces and Interfaces
Condensed Matter Physics
On resistance
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Impact ionization
law
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
Current (fluid)
business
High electron
Semi insulating
Subjects
Details
- ISSN :
- 18626319 and 18626300
- Volume :
- 217
- Database :
- OpenAIRE
- Journal :
- physica status solidi (a)
- Accession number :
- edsair.doi.dedup.....40a71a105bebd6e6f1edf95807aa6c01