Pulse nanosecond emitter for high resolution optical radars

The aim of the work is to create a miniature pulse optical emitter on an infrared laser diode with a pulse duration of the order of 1 ns and a pulse power of more than 30 W based on the effect of high-efficiency avalanche switching in bipolar silicon transistors. An optical emitter that can improve the accuracy of optical radar operation up to 10 times and which is a record indicator has been developed. The ways of increasing the radiation power, increasing the repetition rate of pulses (necessary to improve the accuracy of the radar), and searching for ways to transition to the subnanosecond region are considered.