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Single-shot readout of a driven hybrid qubit in a GaAs double quantum dot
- Publication Year :
- 2021
-
Abstract
- We report a single-shot-based projective readout of a semiconductor hybrid qubit formed by three electrons in a GaAs double quantum dot. Voltage-controlled adiabatic transitions between the qubit operations and readout conditions allow high-fidelity mapping of quantum states. We show that a large ratio both in relaxation time vs tunneling time (≈50) and singlet-triplet splitting vs thermal energy (≈20) allows energy-selective tunneling-based spin-to-charge conversion with a readout visibility of ≈92.6%. Combined with ac driving, we demonstrate high visibility coherent Rabi and Ramsey oscillations of a hybrid qubit in GaAs. Further, we discuss the generality of the method for use in other materials, including silicon.
- Subjects :
- Silicon
FOS: Physical sciences
chemistry.chemical_element
Bioengineering
02 engineering and technology
Electron
Quantum state
General Materials Science
Adiabatic process
Quantum tunnelling
Physics
Quantum Physics
business.industry
Mechanical Engineering
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Semiconductor
chemistry
Quantum dot
Qubit
Optoelectronics
Quantum Physics (quant-ph)
0210 nano-technology
business
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....3fad0eecfa53ad4276078d309d3799b4