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Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots
Influence of the InAs coverage on the phonon-assisted recombination in InAs/GaAs quantum dots
- Source :
- Digital.CSIC. Repositorio Institucional del CSIC, instname
- Publication Year :
- 2002
- Publisher :
- Elsevier, 2002.
-
Abstract
- 6 páginas, 3 figuras.<br />In this work, a study of the relaxation mechanisms in InAs self-assembled quantum dots have been performed by means of photoluminescence (PL), resonant PL (RPL) and PL excitation. The observed phenomenology is different for samples with different InAs coverage. At low InAs coverages, two resonant Raman scattering lines are observed when the excitation energy is chosen inside the emission band. These lines are related to the TO and LO GaAs phonons. Multi-phonon relaxation of carriers (GaAs phonons) is clearly observed in RPL and excitation PL in the lowest InAs coverage sample. Neither such mechanism nor resonant Raman scattering is present in samples with larger InAs coverages, for which the average quantum dot size and areal density remain essentially constant.<br />This work has been partially supported by the spanish Ministerio de Ciencia y Tecnolog ıa under project number TIC99-1035-C02, Ministerio de Asuntos Exteriores (MUTIS program) and the Generalitat Valenciana.
- Subjects :
- Photoluminescence
Phonon
Light scattering
symbols.namesake
chemistry.chemical_compound
Condensed Matter::Materials Science
Gallium arsenide
Materials Chemistry
Indium arsenide
Condensed matter physics
Condensed Matter::Other
Heterojunction
Surfaces and Interfaces
Quantum effects
Condensed Matter Physics
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Surfaces, Coatings and Films
chemistry
Quantum dot
symbols
Molecular beam epitaxy
Raman scattering
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Digital.CSIC. Repositorio Institucional del CSIC, instname
- Accession number :
- edsair.doi.dedup.....3e9e8643a5462fbd08319371e57bd801