Scalable high performance radio frequency electronics based on large domain bilayer MoS2

Atomically-thin layered molybdenum disulfide (MoS2) has attracted tremendous research attention for their potential applications in high performance DC and radio frequency electronics, especially for flexible electronics. Bilayer MoS2 is expected to have higher electron mobility and higher density of states with higher performance compared with single layer MoS2. Here, we systematically investigate the synthesis of high quality bilayer MoS2 by chemical vapor deposition on molten glass with increasing domain sizes up to 200 μm. High performance transistors with optimized high-κ dielectrics deliver ON-current of 427 μA μm−1 at 300 K and a record high ON-current of 1.52 mA μm−1 at 4.3 K. Moreover, radio frequency transistors are demonstrated with an extrinsic high cut-off frequency of 7.2 GHz and record high extrinsic maximum frequency of oscillation of 23 GHz, together with gigahertz MoS2 mixers on flexible polyimide substrate, showing the great potential for future high performance DC and high-frequency electronics.
Large area two-dimensional materials show promise for applications in DC and RF flexible electronics. Here, the authors report RF transistors based on chemical vapor deposited bilayer MoS2 with 23 GHz extrinsic maximum oscillation frequency, and gigahertz mixers on flexible polyimide substrates.