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Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack
- Publication Year :
- 2013
-
Abstract
- We have demonstrated 0.15-µm-gate-length AlGaN/GaN high-electron-mobility transistors (HEMTs) with direct-current (DC) and microwave performances for the first time using a complementary metal–oxide–semiconductor (CMOS)-compatible non-gold metal stack. Si/Ta-based ohmic contact exhibited low contact resistance (Rc=0.24 Ω.mm) with smooth surface morphology. The fabricated GaN HEMTs exhibited gmmax=250 mS/mm, fT/fmax=39/39 GHz, B Vgd=90 V, and drain current collapse
- Subjects :
- Materials science
Silicon
business.industry
Contact resistance
Transistor
General Engineering
General Physics and Astronomy
chemistry.chemical_element
Science::Physics [DRNTU]
law.invention
CMOS
Stack (abstract data type)
chemistry
law
Optoelectronics
Figure of merit
business
Ohmic contact
Microwave
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....3d07bb5aa28b8725515825877fe848ae