Back to Search
Start Over
Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor
- Source :
- Advanced Functional Materials, 31(23)
- Publication Year :
- 2021
-
Abstract
- In this study, high-performance few-layered ReS2 field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS2 FET having a trade-off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h-BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h-BN dual-gated ReS2 with a high mobility of 46.1 cm2 V−1 s−1, a high current on/off ratio of ≈106, a subthreshold swing of 2.7 V dec−1, and a low effective interface trap density (Nt,eff) of 7.85 × 1010 cm−2 eV−1 at a small operating voltage (2 channel through Y-function method as a function of constant top gate bias.
- Subjects :
- Materials science
business.industry
Transistor
field-effect transistors
Hexagonal boron nitride
Condensed Matter Physics
2D materials
Electronic, Optical and Magnetic Materials
law.invention
Dual (category theory)
Biomaterials
law
Electrochemistry
Optoelectronics
Field-effect transistor
hexagonal boron nitride
business
dual-gate ReS
defects
Subjects
Details
- Language :
- English
- ISSN :
- 1616301X
- Database :
- OpenAIRE
- Journal :
- Advanced Functional Materials, 31(23)
- Accession number :
- edsair.doi.dedup.....3c5917717de2c625f30e79c7dc35c21e