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Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone
- Source :
- ACS Applied Materials & Interfaces
- Publication Year :
- 2014
- Publisher :
- American Chemical Society (ACS), 2014.
-
Abstract
- We present an Al2O3 dielectric layer on molybdenum disulfide (MoS2), deposited using atomic layer deposition (ALD) with ozone/trimethylaluminum (TMA) and water/TMA as precursors. The results of atomic force microscopy and low-energy ion scattering spectroscopy show that using TMA and ozone as precursors leads to the formation of uniform Al2O3 layers, in contrast to the incomplete coverage we observe when using TMA/H2O as precursors. Our Raman and X-ray photoelectron spectroscopy measurements indicate minimal variations in the MoS2 structure after ozone treatment at 200 °C, suggesting its excellent chemical resistance to ozone.
- Subjects :
- Letter
Ozone
Materials science
Analytical chemistry
Nanotechnology
Dielectric
ozone
Atomic layer deposition
chemistry.chemical_compound
symbols.namesake
chemistry
X-ray photoelectron spectroscopy
atomic layer deposition
symbols
General Materials Science
high-k dielectric
MoS2
Raman spectroscopy
Spectroscopy
Molybdenum disulfide
High-κ dielectric
Subjects
Details
- ISSN :
- 19448252 and 19448244
- Volume :
- 6
- Database :
- OpenAIRE
- Journal :
- ACS Applied Materials & Interfaces
- Accession number :
- edsair.doi.dedup.....3c1bc45fbdfe5508b8bb9281aaffdbb9