Plasma-enhanced reactive linear sputtering source for formation of silicon-based thin films

In this study, an inductively coupled plasma (ICP)-enhanced reactive sputter deposition system with a rectangular target was developed as a linear plasma source for roll-to-roll deposition processes. The longitudinal distribution of the film thickness indicated the feasibility of uniformity control via the control of the power deposition profile of the assisted ICPs. The characteristics of Si films were investigated in terms of the film thickness uniformity and film crystallinity. The results of Raman and X-ray diffraction measurements indicated the crystallization of the Si film with a crystallinity as high as 73%–78% in all the samples of the longitudinal position.