Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots

Self-organized InAs/GaAs quantum dots (QDs) were grown by molecular beam epitaxy. The photoluminescence, its power, and temperature dependences have been studied for the ensembles of InAs QDs embedded in GaAs matrix to investigate the interband transition energies. Theoretical calculations of confined electron (heavy-hole) energy in the InAs/GaAs QDs have been performed by means of effective mass approximation, taking into account strain effects. The shape of the InAs QDs was modeled to be a convex-plane lens. The calculated interband transition energies were compared with the results of the photoluminescence spectra. The calculated interband transition energy from the ground electronic subband to the ground heavy-hole state was in reasonable agreement with the transition energy obtained by the photoluminescence measurement.