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Smart way to adjust Schottky barrier height in 130 nm BiCMOS process for sub-THz applications
- Source :
- IEEE Radio and Wireless Symposium (RWS), IEEE Radio and Wireless Symposium (RWS), Jan 2020, San Antonio, United States. ⟨10.1109/RWS45077.2020.9050042⟩, RWS
- Publication Year :
- 2020
- Publisher :
- HAL CCSD, 2020.
-
Abstract
- International audience; In this paper, an innovative Schottky diode architecture is proposed and implemented in 130 nm BiCMOS technology. A state-of-the-art 1 THz cut-off frequency is measured and an innovative way to modify the height of the Schottky barrier is proposed. This smart way could enable zero-bias high-frequency circuit designs with a very low height value of the Schottky barrier in advanced BiCMOS technology without requiring any custom implantation.
- Subjects :
- 010302 applied physics
Materials science
Terahertz radiation
business.industry
Schottky barrier
020208 electrical & electronic engineering
Schottky diode
Schottky diodes
02 engineering and technology
01 natural sciences
Bicmos technology
barrier height
[SPI]Engineering Sciences [physics]
Bicmos process
Nsinker
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
thermal budget
business
cut-off frequency
Hardware_LOGICDESIGN
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- IEEE Radio and Wireless Symposium (RWS), IEEE Radio and Wireless Symposium (RWS), Jan 2020, San Antonio, United States. ⟨10.1109/RWS45077.2020.9050042⟩, RWS
- Accession number :
- edsair.doi.dedup.....38f6b3e1feca4deb6a42e001b9a1b715
- Full Text :
- https://doi.org/10.1109/RWS45077.2020.9050042⟩