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Statistical characterization and modeling of random telegraph noise effects in 65nm SRAMs cells
- Source :
- SMACD, UPCommons. Portal del coneixement obert de la UPC, Universitat Politècnica de Catalunya (UPC), Recercat. Dipósit de la Recerca de Catalunya, instname
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is derived by applying statistical and physics based Montecarlo modeling to the experimental data. Results show that RTN can have a significant impact on the memory write operations and should therefore be taken into account during the memory design phase
- Subjects :
- Engineering
Integrated circuits
02 engineering and technology
01 natural sciences
Noise (electronics)
law.invention
Reduction (complexity)
law
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Electronic engineering
characterization
Static random-access memory
Random Telegraph Noise
variability
010308 nuclear & particles physics
business.industry
Transistor
Experimental data
modeling
Enginyeria electrònica::Microelectrònica::Circuits integrats [Àrees temàtiques de la UPC]
White noise
SRAM
020202 computer hardware & architecture
Characterization (materials science)
Logic gate
Circuits integrats
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)
- Accession number :
- edsair.doi.dedup.....3882942d950df333bf1a571b6aeb6e65
- Full Text :
- https://doi.org/10.1109/smacd.2017.7981610