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Full front and back gate voltage range method for the parameter extraction of advanced FDSOI CMOS devices

Authors :
Gerard Ghibaudo
E. G. Ioannidis
Emmanuel Josse
Sebastien Haendler
C.A. Dimitriadis
Christoforos G. Theodorou
T.A. Karatsori
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
Aristotle University of Thessaloniki, Department of Physics
STMicroelectronics [Crolles] (ST-CROLLES)
ARISTEIA II(Project 4154 of the GreekGeneral Secretariat for Research and Technology, co-funded by theEuropean Social Fund and national funds)
European Project: 325633,EC:FP7:SP1-JTI,ENIAC-2012-2,PLACES2BE(2012)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
Source :
2015 DRC Proceedings, 2015 73rd Annual Device Research Conference (DRC), 2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.115-116, ⟨10.1109/DRC.2015.7175582⟩
Publication Year :
2015
Publisher :
HAL CCSD, 2015.

Abstract

session poster; International audience; A full front gate voltage range parameter extraction technique is developed taking into account both the back gate voltages and the channel length. The method is easily applicable to extract precisely all electrical parameters of advanced nano-scale FDSOI MOSFETs.

Subjects

Subjects :
Materials science
business.industry
Extraction (chemistry)
Electrical engineering
Hardware_PERFORMANCEANDRELIABILITY
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Gate voltage
[SPI.TRON]Engineering Sciences [physics]/Electronics
Computer Science::Hardware Architecture
Computer Science::Emerging Technologies
CMOS
Gate oxide
Hardware_GENERAL
Range (statistics)
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
business
Communication channel
Front (military)
Voltage
Hardware_LOGICDESIGN

Details

Language :
English
Database :
OpenAIRE
Journal :
2015 DRC Proceedings, 2015 73rd Annual Device Research Conference (DRC), 2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.115-116, ⟨10.1109/DRC.2015.7175582⟩
Accession number :
edsair.doi.dedup.....37203e9bfc2b0112958266e9c1cdb88a
Full Text :
https://doi.org/10.1109/DRC.2015.7175582⟩
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