Hybrid GaN-SiC Power Switches for Optimum Switching, Conduction and Free-Wheeling Performance

In the wide bandgap (WBG) arena, it is generally considered that GaN and SiC are competitors for the 600 V voltage class. However, in reality, they possess partly highly complementary functional characteristics, which, when duly combined, can yield advanced performance in power conversion applications. Here, the focus is specifically on the development of a hybrid GaN-SiC power switch to demonstrate superiority over either a GaN-only or SiC-only transistor. It is an original undertaking, whose outcomes will be directly applicable to several application domains.
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2022), 22-25 May 2022, Vancouver, Canada