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AlGaN Deep-Ultraviolet Light-Emitting Diodes with Localized Surface Plasmon Resonance by a High-Density Array of 40 nm Al Nanoparticles
- Source :
- ACS Applied Materials & Interfaces. 12:36339-36346
- Publication Year :
- 2020
- Publisher :
- American Chemical Society (ACS), 2020.
-
Abstract
- We present a remarkable improvement in the efficiency of AlGaN deep-ultraviolet light-emitting diodes (LEDs) enabled by the coupling of localized surface plasmon resonance (LSPR) mediated by a high-density array of Al nanoparticles (NPs). The Al NPs with an average diameter of ∼40 nm were uniformly distributed near the Al
- Subjects :
- Materials science
business.industry
Ultraviolet light emitting diodes
Physics::Optics
Nanoparticle
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
law.invention
Aluminum gallium nitride
Coupling (electronics)
law
Optoelectronics
General Materials Science
Surface plasmon resonance
0210 nano-technology
business
Diode
Light-emitting diode
Subjects
Details
- ISSN :
- 19448252 and 19448244
- Volume :
- 12
- Database :
- OpenAIRE
- Journal :
- ACS Applied Materials & Interfaces
- Accession number :
- edsair.doi.dedup.....3481df1a52e60d9c6696081b2f52df62
- Full Text :
- https://doi.org/10.1021/acsami.0c08916