Piezoresistance of nano-scale silicon up to 2 GPa in tension

Authors :: Umesh Kumar Bhaskar
Vikram Passi
Jean-Pierre Raskin
Thomas Pardoen
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
UCL - SST/IMMC/IMAP - Materials and process engineering
UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Source :: Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2013, 102, pp.031911-1-4. ⟨10.1063/1.4788919⟩, Applied Physics Letters, Vol. 102, no.3, p. 031911 (2013), Applied Physics Letters, 2013, 102, pp.031911-1-4. ⟨10.1063/1.4788919⟩
Publication Year :: 2013
Publisher :: HAL CCSD, 2013.
Abstract: The piezo-resistance of 100 nm-thick, [110] oriented, p-type, mono-crystalline Si beams has been investigated under large uniaxial tension up to 2 GPa using an original on-chip tensile testing set-up. The piezo-resistance coefficient (π) was found to increase by a factor of 6 compared with ∼1.5 for Si bulk, when decreasing the dopant concentration from Na ∼ 1 × 1019 cm−3 down to Na ∼ 5 × 1017 cm−3. Reduction of resistance by a factor of 5.8, higher than theoretical maximum of 4.5, is reported for Na ∼ 5 × 1017 cm−3 under a stress of 1.7 GPa, without any sign of saturation.

Language :: English
ISSN :: 00036951
Database :: OpenAIRE
Journal :: Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2013, 102, pp.031911-1-4. ⟨10.1063/1.4788919⟩, Applied Physics Letters, Vol. 102, no.3, p. 031911 (2013), Applied Physics Letters, 2013, 102, pp.031911-1-4. ⟨10.1063/1.4788919⟩
Accession number :: edsair.doi.dedup.....3462dac62b5199d66c10b18149e19559

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