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Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2
- Publication Year :
- 2021
-
Abstract
- Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS$_2$ films at 560 C in 50 min, within the 450-to-600 C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on-state current up to ~140 $\mathrm{{\mu}A/{\mu}m}$ at 1 V drain-to-source voltage for 100 nm channel lengths, the highest reported to date for 1L MoS$_2$ grown below 600 C using solid-source precursors. The effective mobility from transfer length method test structures is $\mathrm{29 \pm 5\ cm^2V^{-1}s^{-1}}$ at $\mathrm{6.1 \times 10^{12}\ cm^{-2}}$ electron density, which is comparable to mobilities reported from films grown at higher temperatures. The results of this work provide a path toward the realization of high-quality, thermal-budget-compatible 2D semiconductors for heterogeneous integration with silicon manufacturing.
- Subjects :
- Electron mobility
Electron density
Condensed Matter - Materials Science
Materials science
Silicon
Condensed Matter - Mesoscale and Nanoscale Physics
business.industry
Transistor
Analytical chemistry
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
chemistry.chemical_element
Applied Physics (physics.app-ph)
Chemical vapor deposition
Physics - Applied Physics
law.invention
chemistry.chemical_compound
Semiconductor
chemistry
law
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Monolayer
General Materials Science
business
Molybdenum disulfide
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....344d56274e54605b3b6e71f01e15d618