Back to Search
Start Over
Suppression of non-radiative recombination toward high efficiency perovskite light-emitting diodes
- Source :
- APL Materials, Vol 7, Iss 2, Pp 021102-021102-5 (2019)
- Publication Year :
- 2019
- Publisher :
- AIP Publishing LLC, 2019.
-
Abstract
- Nickel oxide (NiO) would be an alternative hole transport layer for perovskite light-emitting diodes (PeLEDs). However, the performances of NiO-based PeLEDs are still inferior due to the adverse non-radiative recombination at the interface. Here, a poly(9-vinlycarbazole) (PVK) layer is inserted between the perovskite and the NiO film. The photoluminescence quantum yield is dramatically enhanced from 23% to 54% in the presence of PVK layer owing to suppression of the non-radiative recombination. Combined with the favorable hole injection from the ladder energy band scheme of NiO/PVK layer, an external quantum efficiency of 11.2% for a green PeLED is achieved. This work demonstrates the importance of interface control to boost the radiative recombination rate for high performance PeLEDs.
- Subjects :
- Photoluminescence
Materials science
lcsh:Biotechnology
Quantum yield
02 engineering and technology
01 natural sciences
law.invention
law
lcsh:TP248.13-248.65
0103 physical sciences
General Materials Science
Spontaneous emission
Perovskite (structure)
Non-radiative recombination
010302 applied physics
business.industry
Non-blocking I/O
General Engineering
021001 nanoscience & nanotechnology
lcsh:QC1-999
Optoelectronics
Quantum efficiency
0210 nano-technology
business
lcsh:Physics
Light-emitting diode
Subjects
Details
- Language :
- English
- Volume :
- 7
- Issue :
- 2
- Database :
- OpenAIRE
- Journal :
- APL Materials
- Accession number :
- edsair.doi.dedup.....32d511ab8d4b842b75178402610d1b1b