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Peculiar Magnetism of UAu$_{2}$Si$_{2}$
- Publication Year :
- 2016
-
Abstract
- Single-crystalline UAu$_2$Si$_2$ has been grown by a floating-zone melting method, and its magnetic, thermal and transport properties have been investigated through measurements of magnetization, specific heat and electrical resistivity to reveal its peculiar magnetism. It is shown that UAu$_2$Si$_2$ undergoes a second-order phase transition at \tm = 19 K, which had been believed to be ferromagnetic ordering in the literature, from a paramagnetic phase to an uncompensated antiferromagnetic phase with spontaneous magnetization along the tetragonal $c$-axis (the easy magnetization direction). The magnetic entropy analysis points to the itinerant character of 5f electrons in the magnetic ordered state of UAu$_2$Si$_2$ with large enhancement of the electronic specific heat coefficient of $\gamma$ $\sim$ 150 mJ/K$^2$mol at 2 K. It also reveals the relatively isotropic crystalline electric field effect of this compound, with contrast to the other relative isostructural compounds. The observed magnetization curves strongly suggest that there is a parasitic ferromagnetic component developing below $\sim$ 50 K in high coercivity with the easy axis along the tetragonal $c$-axis. The results are discussed in the context of evolution of magnetism within the entire family of isostructural U$T_2$Si$_2$ compounds.<br />Comment: 13 pages, 21 figures
- Subjects :
- Physics
Condensed matter physics
Strongly Correlated Electrons (cond-mat.str-el)
Magnetism
FOS: Physical sciences
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Paramagnetism
Tetragonal crystal system
Magnetization
Magnetic anisotropy
Condensed Matter::Materials Science
Condensed Matter - Strongly Correlated Electrons
Ferromagnetism
0103 physical sciences
Antiferromagnetism
Condensed Matter::Strongly Correlated Electrons
010306 general physics
0210 nano-technology
Spontaneous magnetization
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....32cc821821f2cce4b551efabe043fd68