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Modeling artifacts in the analysis of test semiconductor structures in atom probe tomography
- Source :
- AIP Conference Proceedings, AIP Conference Proceedings, 2009, Unknown, Unknown Region. pp.175--180, ⟨10.1063/1.3251216⟩
- Publication Year :
- 2009
- Publisher :
- HAL CCSD, 2009.
-
Abstract
- International audience; In this paper, the investigation of boron delta layers by atom probe tomography is used to demonstrate that a sub nanometer resolution (0.9 nm full-width at half-maximum, FWHM) can be achieved. This resolution is surprisingly lower than the intrinsic resolution observed in silicon (0.2 nm). Reconstruction artifacts are suggested. In this paper, the extent of reconstruction artifacts is evaluated using a model that reproduces the field evaporation of the sample and the image reconstruction. It is shown that reconstruction artifacts can only account for half of the resolution degradation, suggesting an actual physical depth of delta doped B layer of about 0.5 nm.
- Subjects :
- Materials science
Atom probe
Silicon
chemistry.chemical_element
02 engineering and technology
Iterative reconstruction
01 natural sciences
law.invention
Optics
law
0103 physical sciences
Image resolution
Boron
010302 applied physics
[PHYS]Physics [physics]
Depth resolution
business.industry
Doping
Resolution (electron density)
021001 nanoscience & nanotechnology
Full width at half maximum
chemistry
Depth profiling
Tomography
0210 nano-technology
business
SIMS
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- AIP Conference Proceedings, AIP Conference Proceedings, 2009, Unknown, Unknown Region. pp.175--180, ⟨10.1063/1.3251216⟩
- Accession number :
- edsair.doi.dedup.....3053f2331a52f31cdae40d491b1e833d