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Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

Authors :
Thomas J. Rotter
Ikuo Suemune
Hirotaka Sasakura
P. Ahirwar
C. Hermannstadter
Hidekazu Kumano
Ganesh Balakrishnan
Nahid A. Jahan
Source :
Journal of Applied Physics. 113(5):053505
Publication Year :
2013
Publisher :
American Institute of Physics (AIP), 2013.

Abstract

GaSb based quantum wells (QWs) show promising optical properties in near-infrared spectral range. In this paper, we present photoluminescence (PL) spectroscopies of InxGa1−xSb/AlyGa1−ySb QWs and discuss the possible thermal quenching and non-radiative carrier recombination mechanisms of the QW structures. The In and Al concentrations as well as the QW thicknesses were precisely determined with the X-ray diffraction measurements. Temperature dependent time-integrated and time-resolved PL spectroscopies resulted in the thermal activation energies of ∼45 meV, and the overall self-consistent calculation of the band parameters based on the measured physical values confirmed that the activation energies are due to the hole escape from the QW to the barriers. The relation of the present single carrier escape mechanism with the other escape mechanisms reported with other material systems was discussed based on the estimated band offset. The relation of the present thermal hole escape to the Auger recombination was also discussed.

Details

Language :
English
ISSN :
00218979
Volume :
113
Issue :
5
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi.dedup.....2f8da6318faf849ce2c5aae925252102