Room-temperature fabricated thin-film transistors based on compounds with lanthanum and main family element boron

MLA

Dongxiang Luo, et al. Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron. Jan. 2018. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....2f697c1974bf4797e9cecbe8d0e67d34&authtype=sso&custid=ns315887.

APA

Dongxiang Luo, Jianing Xie, Baiquan Liu, Ting Dong, Peng Xiao, Junhua Huang, & Jian Yuan. (2018). Room-temperature fabricated thin-film transistors based on compounds with lanthanum and main family element boron.

Chicago

Dongxiang Luo, Jianing Xie, Baiquan Liu, Ting Dong, Peng Xiao, Junhua Huang, and Jian Yuan. 2018. “Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron,” January. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....2f697c1974bf4797e9cecbe8d0e67d34&authtype=sso&custid=ns315887.