Decay of green photoluminescence in GaP:Zn,O

A low-temperature spectrally resolved study was made of the decay characteristics of green emission in liquid-phase epitaxially grown GaP:Zn,O. An analysis of the steady-state and transient characteristics of this emission is shown to be consistent with a proposed model. The dependence of the pair transition rate on the donor-acceptor pair separation is discussed with reference to a theoretical model based upon the overlap of donor and acceptor wave functions within the effective-mass approximation. A previously reported value of 12.2 A for the zinc acceptor (shallow impurity) effective Bohr radius in GaP is confirmed