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Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy
- Source :
- Recercat. Dipósit de la Recerca de Catalunya, instname, Dipòsit Digital de Documents de la UAB, Universitat Autònoma de Barcelona, Recercat: Dipósit de la Recerca de Catalunya, Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
- Publication Year :
- 2021
-
Abstract
- A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (
- Subjects :
- Atomic force microscopes
Microscope
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Thin films
Nanotechnology
Conductive atomic force microscopy
Conductivity
Thermal conduction
Characterization (materials science)
law.invention
Stress (mechanics)
Atomic force microscopy
law
Electrical properties
Optoelectronics
Thin film
business
Electrical conductor
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Recercat. Dipósit de la Recerca de Catalunya, instname, Dipòsit Digital de Documents de la UAB, Universitat Autònoma de Barcelona, Recercat: Dipósit de la Recerca de Catalunya, Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
- Accession number :
- edsair.doi.dedup.....2da3563d33a55282164fc39f449fc411