Evidence for the Metal-Insulator Transition in a Pure 3D Metal

Authors :: Agnès Traverse
L. Dumoulin
P. Nédellec
Harry Bernas
L. Amaral
Guy Deutscher
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM)
Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
Lorgeril, Jocelyne
Source :: EPL-Europhysics Letters, EPL-Europhysics Letters, European Physical Society/EDP Sciences/Società Italiana di Fisica/IOP Publishing, 1986, 2, pp.465-470
Publication Year :: 1986
Publisher :: IOP Publishing, 1986.
Abstract: The metal-insulator transition has been induced by hydrogen implantation at low fluence in a macroscopically inhomogeneous percolating Al-Ge mixture near the percolation threshold. The transition is reversible by annealing, showing that hydrogen implantation increases the local disorder in the Al metal grains without affecting the percolation structure. We submit that this is the first experimental evidence of an Anderson (metal-insulator) transition in a three-dimensional pure metal.