Back to Search
Start Over
Spin properties of dense near-surface ensembles of nitrogen-vacancy centers in diamond
- Source :
- Physical Review B. 97
- Publication Year :
- 2018
- Publisher :
- American Physical Society (APS), 2018.
-
Abstract
- We present a study of the spin properties of dense layers of near-surface nitrogen-vacancy (NV) centres in diamond created by nitrogen ion implantation. The optically detected magnetic resonance contrast and linewidth, spin coherence time, and spin relaxation time, are measured as a function of implantation energy, dose, annealing temperature and surface treatment. To track the presence of damage and surface-related spin defects, we perform in situ electron spin resonance spectroscopy through both double electron-electron resonance and cross-relaxation spectroscopy on the NV centres. We find that, for the energy ($4-30$~keV) and dose ($5\times10^{11}-10^{13}$~ions/cm$^2$) ranges considered, the NV spin properties are mainly governed by the dose via residual implantation-induced paramagnetic defects, but that the resulting magnetic sensitivity is essentially independent of both dose and energy. We then show that the magnetic sensitivity is significantly improved by high-temperature annealing at $\geq1100^\circ$C. Moreover, the spin properties are not significantly affected by oxygen annealing, apart from the spin relaxation time, which is dramatically decreased. Finally, the average NV depth is determined by nuclear magnetic resonance measurements, giving $\approx10$-17~nm at 4-6 keV implantation energy. This study sheds light on the optimal conditions to create dense layers of near-surface NV centres for high-sensitivity sensing and imaging applications.<br />Comment: 12 pages, 7 figures
- Subjects :
- Condensed Matter - Materials Science
Materials science
Condensed matter physics
Annealing (metallurgy)
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
Diamond
02 engineering and technology
engineering.material
021001 nanoscience & nanotechnology
01 natural sciences
Ion
law.invention
Paramagnetism
Ion implantation
law
Vacancy defect
0103 physical sciences
engineering
Atomic physics
010306 general physics
0210 nano-technology
Spectroscopy
Electron paramagnetic resonance
Subjects
Details
- ISSN :
- 24699969 and 24699950
- Volume :
- 97
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi.dedup.....2c8590caf0dc22691bc0acd3de655557