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2D MXene–Molecular Hybrid Additive for High-Performance Ambipolar Polymer Field-Effect Transistors and Logic Gates

Authors :
Zhenjie Ni
Yifan Yao
Artur Ciesielski
David Beljonne
Ye Wang
Yusheng Chen
Wenping Hu
Paolo Samorì
Sai Manoj Gali
Hanlin Wang
Iwona Janica
Hai-Jun Peng
Nicholas Turetta
univOAK, Archive ouverte
Institut de Science et d'ingénierie supramoléculaires (ISIS)
Université de Strasbourg (UNISTRA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE)
Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique
Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)
University of Chinese Academy of Sciences [Beijing] (UCAS)
Université de Mons (UMons)
Adam Mickiewicz University in Poznań (UAM)
Tianjin University (TJU)
Réseau nanophotonique et optique
Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Matériaux et nanosciences d'Alsace (FMNGE)
Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)
Source :
Advanced Materials, Advanced Materials, 2021, 33 (20), pp.2008215. ⟨10.1002/adma.202008215⟩, Advanced Materials, Wiley-VCH Verlag, 2021, 33 (20), pp.2008215. ⟨10.1002/adma.202008215⟩
Publication Year :
2021
Publisher :
HAL CCSD, 2021.

Abstract

International audience; MXenes are highly conductive layered materials that are attracting a great interest for high-performance opto-electronics, photonics, and energy applications.. Their non-covalent functionalization with ad hoc molecules enables the production of stable inks of 2D flakes to be processed in thin-films. Here, the formation of stable dispersions via the intercalation of Ti3C2Tx with didecyldimethyl ammonium bromide (DDAB) yielding Ti3C2Tx–DDAB, is demonstrated. Such functionalization modulates the properties of Ti3C2Tx, as evidenced by a 0.47 eV decrease of the work function. It is also shown that DDAB is a powerful n-dopant capable of enhancing electron mobility in conjugated polymers and 2D materials. When Ti3C2Tx–DDAB is blended with poly(diketopyrrolopyrrole-co-selenophene) [(PDPP–Se)], a simultaneous increase by 170% and 152% of the hole and electron field-effect mobilities, respectively, is observed, compared to the neat conjugated polymer, with values reaching 2.0 cm2 V−1 s−1. By exploiting the balanced ambipolar transport of the Ti3C2Tx–DDAB/PDPP–Se hybrid, complementary metal–oxide–semiconductor (CMOS) logic gates are fabricated that display well-centered trip points and good noise margin (64.6% for inverter). The results demonstrate that intercalant engineering represents an efficient strategy to tune the electronic properties of Ti3C2Tx yielding functionalized MXenes for polymer transistors with unprecedented performances and functions.

Details

Language :
English
ISSN :
09359648 and 15214095
Database :
OpenAIRE
Journal :
Advanced Materials, Advanced Materials, 2021, 33 (20), pp.2008215. ⟨10.1002/adma.202008215⟩, Advanced Materials, Wiley-VCH Verlag, 2021, 33 (20), pp.2008215. ⟨10.1002/adma.202008215⟩
Accession number :
edsair.doi.dedup.....2c2141de4140ae31daf5e54ba8771e05