Evolution of ordered one-dimensional and two-dimensional InAs/InP quantum dot arrays on patterned InP (100) and (311)B substrates by self-organized anisotropic strain engineering

The formation of ordered InAs/InP quantum dot (QD) arrays is demonstrated on patterned InP (1 0 0) and (3 1 1)B substrates by the concept of self-organized anisotropic strain engineering in chemical beam epitaxy (CBE). On shallow- and deep stripe-patterned InP (1 0 0) substrates, depending on the stripe orientation, the linear one-dimensional InAs QD arrays are rotated away from their natural direction due to the presence of vicinal stepped sidewall planes modifying the self-organization process, coexisting with QD free steep side facets on the deep-patterned substrates. On shallow- and deep-patterned InP (3 1 1)B substrates only QD free side facets form with flat top and bottom areas, not affecting the natural ordering of the two-dimensional InAs QD arrays. On the deep-patterned substrates a row of dense QDs forms on top along the side facets due to their slow-growing behavior. The optical properties of the QD arrays on the patterned substrates are not degraded compared to those of arrays formed on planar substrates for both InP (1 0 0) and (3 1 1)B substrates showing the potential of self-organized anisotropic strain engineering combined with step engineering for the creation of advanced complex QD arrays and networks. © 2010 Elsevier B.V. All rights reserved. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Article in Press